Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 1019 m$-$3 and their mobility is 1.6 m2/(V.s) then the resistivity of the semiconductor (since it is an n-type semiconductor contribution of holes is ignored) is close to :

Question

Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 10¹⁹ m^$-$3 and their mobility is 1.6 m²/(V.s) then the resistivity of the semiconductor (since it is an n-type semiconductor contribution of holes is ignored) is close to :

$2\,\Omega $m

4$\,\Omega $m

0.4 $\,\Omega $m

0.2 $\,\Omega $m

Solution

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