C and Si both have same lattice structure; having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because
In case of C the valence band is not completely filled at absolute zero temperature.
In case of C the conduction band is partly filled even at absolute zero temperature.
The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
The four bonding electrons in the case of C lie in the third orbit , whereas for Si they lie in the fourth orbit.
Solution
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