Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 $ \times $ 1016 m$-$3. Doping by indium increases nh to 4.5 $ \times $ 1022 m$-$3. The doped semiconductor is of

Question

Pure Si at 500 K has equal number of electron (n_e) and hole (n_h) concentrations of 1.5 $ \times $ 10¹⁶ m^$-$3. Doping by indium increases n_h to 4.5 $ \times $ 10²² m^$-$3. The doped semiconductor is of

p-type having electron concentration n_e = 5 $ \times $ 10⁹ m^$-$3

n-type with electron concentration n_e = 5 $ \times $ 10²² m^$-$3

p-type with electron concentration n_e = 2.5 $ \times $ 10¹⁰ m^$-$3

n-type with electron concentration n_e = 2.5 $ \times $ 10²³ m^$-$3

Solution

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